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Oshima, Takeshi; Sato, Takahiro; Oikawa, Masakazu*; Onoda, Shinobu; Hirao, Toshio; Ito, Hisayoshi
Materials Science Forum, 527-529, p.1347 - 1350, 2006/00
Charge induced in 6H-SiC pn diodes by oxygen ion microbeams was examined in an energy range between 6 and 18 MeV. To minimize the influence of damage, single ion hit Transient Ion Beam Induced Current (TIBIC) measurement system, in which the transient current induced by single ion incidence can be measured, was used in this study. The value of charge increases with increasing reverse applied bias, and the saturation of charge is observed when the depletion layer becomes longer than ion range. An increase of collected charge by the funneling effect (the generation of a transient electric filed) is observed in the case of the depletion layer shorter than ion range. The charge collection efficiency is estimated to be 100 % in the saturation region (the depletion layer longer than ion range). It strongly suggests that high quality particle detectors are fabricated using SiC.
Onoda, Shinobu; Hirao, Toshio; Laird, J. S.; Okamoto, Tsuyoshi*; Koizumi, Yoshiharu*; Kamiya, Tomihiro
Nuclear Instruments and Methods in Physics Research B, 231(1-4), p.497 - 501, 2005/04
Times Cited Count：3 Percentile：30.27(Instruments & Instrumentation)no abstracts in English
Oshima, Takeshi; Sato, Takahiro; Oikawa, Masakazu*; Yamakawa, Takeshi; Onoda, Shinobu; Wakasa, Takeshi; Laird, J. S.; Hirao, Toshio; Kamiya, Tomihiro; Ito, Hisayoshi; et al.
Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.177 - 180, 2004/10
no abstracts in English
Takahashi, Yoshihiro*; Shibata, Toshihiko*; Murase, Yuji*; Onishi, Kazunori*; Hirao, Toshio; Kamiya, Tomihiro
Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.111 - 114, 2004/10
no abstracts in English
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photodiodes studied by pulsed laser measurementsLaird, J. S.; Hirao, Toshio; Onoda, Shinobu; Ito, Hisayoshi
IEEE Transactions on Nuclear Science, 50(6, Part1), p.2003 - 2010, 2003/12
Times Cited Count：10 Percentile：56.43(Engineering, Electrical & Electronic)no abstracts in English
Oshima, Takeshi; Lee, K. K.; Onoda, Shinobu*; Kamiya, Tomihiro; Oikawa, Masakazu*; Laird, J. S.; Hirao, Toshio; Ito, Hisayoshi
Nuclear Instruments and Methods in Physics Research B, 210, p.201 - 205, 2003/09
Times Cited Count：4 Percentile：33.69(Instruments & Instrumentation)Electrodes on SiC pn diode were studied uising Transient Ion Beam Induced Current system (TIBIC). pn junction of SiC diode was formed by phosphorus ion implantation at 800 
C and subsequent annealing at 1800 C for 1 min in Ar. Electrodes of diode were fabricated (1) Al evaporation and sintering at 850 C or (2) one more Al evaporation after the process mentioned above. TIBIC measurement using 15 MeV-O and 12 MeV-Ni ion micro beam. As the result, non-uniformity for transient current from the electrodes of diode (1)was observed. As for diode (2), such non-uniformity was not observed. On the other hand, the value of collected charges was the same for both diodes. This indicates that the quality of pn junction is the almost same for both diodes. For current-voltage characteristics, both diodes showed a order of pA at reverse bias of 30 V and turn-on at forward bias of 2V which are ideal for SiC diode. Thus, we can conclude that we obtain the information on electrical characteristics of electrodes which is not obtained from normal current-voltage measurement.
Oshima, Takeshi; Lee, K. K.; Onoda, Shinobu; Kamiya, Tomihiro; Oikawa, Masakazu*; Laird, J. S.; Hirao, Toshio; Ito, Hisayoshi
Nuclear Instruments and Methods in Physics Research B, 206(1-4), p.979 - 983, 2003/05
Times Cited Count：8 Percentile：50.24(Instruments & Instrumentation)Ion beam induced current for pn SiC diode was observed by using MeV range ion beams.The diodes used in this study were pn diode fabricated on n-type epitaxial 6H-SiC. The p region was formed using Al-ion implantation at 800 C and subsequent annealing at 1800 C. The value of charge collection for diode applied to 30V by 12MeV-Ni microbeam irradiationis estimated to be (1.7-1.8)
10
Q from the analyzing transient-IBIC measurement.The efficiency of the charge collection is 85-93%.
Mori, Hidenobu*; Hirao, Toshio; Laird, J. S.; Onoda, Shinobu*; Lee, K. K.; Abe, Hiroshi; Ito, Hisayoshi; Okamoto, Tsuyoshi*; Koizumi, Yoshiharu*
JNC TN7200 2001-001, p.55 - 57, 2002/01
no abstracts in English
Laird, J. S.; Hirao, Toshio; Mori, Hidenobu*; Onoda, Shinobu*; Kamiya, Tomihiro; Ito, Hisayoshi
Nuclear Instruments and Methods in Physics Research B, 181(1-4), p.87 - 94, 2001/07
Times Cited Count：65 Percentile：96.69(Instruments & Instrumentation)no abstracts in English
Laird, J. S.; Hirao, Toshio; Onoda, Shinobu*; Mori, Hidenobu*; Ito, Hisayoshi
Solid State Phenomena Vol.78-79, p.401 - 406, 2001/07
no abstracts in English
Hirao, Toshio; Laird, J. S.; Mori, Hidenobu*; Onoda, Shinobu*; Ito, Hisayoshi
JAERI-Conf 2000-019, p.90 - 92, 2001/02
no abstracts in English
